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| NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638, BC 640 (PNP) q BC 635 ... BC 639 2 3 1 Type BC 635 BC 637 BC 639 Marking - Ordering Code Q68000-A3360 Q68000-A2285 Q68000-A3361 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 63 5 -10 (hFE = 63 ... 160), or BC 63 5 -16 (hFE = 100 ... 250) are available. Ordering codes upon request. 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 635 ... BC 639 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg Values BC 635 45 45 Unit BC 637 60 60 5 1 1.5 100 200 0.8 (1) 150 - 65 ... + 150 W C mA A BC 639 80 100 V Total power dissipation, TC = 90 C1) Ptot 156 75 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 2 BC 635 ... BC 639 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 Collector-base breakdown voltage IC = 100 A BC 635 BC 637 BC 639 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT - 100 - MHz V(BR)EB0 ICB0 - - IEB0 hFE 25 40 25 VCEsat VBE) - - - - - - - - 250 - 500 1 mV V - - - - 100 20 100 nA A Values typ. max. Unit V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 5 - - - - - - - - - - - - - - V nA - 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BC 635 ... BC 639 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) VCE = 2 V Collector current IC = f (VBE) Semiconductor Group 4 BC 635 ... BC 639 DC current gain hFE = f (IC) VCE = 2 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz Semiconductor Group 5 |
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